Datasheets
M12L64164A-7TVAG2Y by: Elite Semiconductor Memory Technology Inc

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Part Details for M12L64164A-7TVAG2Y by Elite Semiconductor Memory Technology Inc

Overview of M12L64164A-7TVAG2Y by Elite Semiconductor Memory Technology Inc

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Part Details for M12L64164A-7TVAG2Y

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M12L64164A-7TVAG2Y Part Data Attributes

M12L64164A-7TVAG2Y Elite Semiconductor Memory Technology Inc
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M12L64164A-7TVAG2Y Elite Semiconductor Memory Technology Inc Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
Part Life Cycle Code Active
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description TSOP2,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO REFRESH
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 °C
Operating Temperature-Min -40 °C
Organization 4MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for M12L64164A-7TVAG2Y

This table gives cross-reference parts and alternative options found for M12L64164A-7TVAG2Y. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L64164A-7TVAG2Y, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M12L64164A-7TVG2M Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-7TVG2M
M12L64164A-7TIG2C Synchronous DRAM, Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-7TIG2C
M12L64164A-7TG2Y Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-7TG2Y
M12L64164A-7TVAG2M Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-7TVAG2M
M12L64164A-7TIG2M Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-7TIG2M
Part Number Description Manufacturer Compare
M12L64164A-6BG2M Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-6BG2M
IS42SM16400M-75BLI Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc M12L64164A-7TVAG2Y vs IS42SM16400M-75BLI
W9864G6JB-7 Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA60, VFBGA-60 Winbond Electronics Corp M12L64164A-7TVAG2Y vs W9864G6JB-7
M12L64164A-6BVG2Y Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-6BVG2Y
MD56V62161M-10TA Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, TSOP2-54 LAPIS Semiconductor Co Ltd M12L64164A-7TVAG2Y vs MD56V62161M-10TA
MT48LC4M16A2P-6AAIT:J Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, TSOP2-54 Micron Technology Inc M12L64164A-7TVAG2Y vs MT48LC4M16A2P-6AAIT:J
M12L64164A-6BVAG2M Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-6BVAG2M
M12L64164A-7TVAG2M Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-7TVAG2M
MD56V62161M-10TAP DRAM, LAPIS Semiconductor Co Ltd M12L64164A-7TVAG2Y vs MD56V62161M-10TAP
M12L64164A-6BG2Y Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54 Elite Semiconductor Memory Technology Inc M12L64164A-7TVAG2Y vs M12L64164A-6BG2Y

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