Part Details for M12L64164A-6TG by Elite Semiconductor Memory Technology Inc
Overview of M12L64164A-6TG by Elite Semiconductor Memory Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for M12L64164A-6TG
M12L64164A-6TG CAD Models
M12L64164A-6TG Part Data Attributes
|
|
M12L64164A-6TG
Elite Semiconductor Memory Technology Inc
Buy Now
Datasheet
|
Compare Parts:
M12L64164A-6TG
Elite Semiconductor Memory Technology Inc
Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.14 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for M12L64164A-6TG
This table gives cross-reference parts and alternative options found for M12L64164A-6TG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M12L64164A-6TG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W9864G6GH-7S | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Winbond Electronics Corp | M12L64164A-6TG vs W9864G6GH-7S |
| VG36641641BT-6A | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | M12L64164A-6TG vs VG36641641BT-6A |
| K4S641632D-TL600 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | M12L64164A-6TG vs K4S641632D-TL600 |
| K4S641632C-TL600 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | M12L64164A-6TG vs K4S641632C-TL600 |
| IS42S16400-6TI | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | Integrated Silicon Solution Inc | M12L64164A-6TG vs IS42S16400-6TI |
| W9864G6GH-7 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Winbond Electronics Corp | M12L64164A-6TG vs W9864G6GH-7 |
| VG36641641BT-6P | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | M12L64164A-6TG vs VG36641641BT-6P |
| M12L64164A-6TA | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 | Elite Semiconductor Memory Technology Inc | M12L64164A-6TG vs M12L64164A-6TA |
| K4S641632E-TL600 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | M12L64164A-6TG vs K4S641632E-TL600 |
| W986416DH-7 | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | M12L64164A-6TG vs W986416DH-7 |