Datasheets
LS301 by:
Linear Integrated Systems
Ampleon
Avago Technologies
Broadcom Limited
FEMA Electronics Corporation
Honeywell Sensing and Control
IW Microwave Division
KOA Speer Electronics Inc
Lansdale Semiconductor Inc
LED Technology Ltd
Ledtech Electronics
Linear Integrated Systems
Micross Components
NIC Components Corp
NXP Semiconductors
On-Shore Technology Inc
Philips Semiconductors
Samtec Inc
SGS-Ates Componenti Electronici SPA
Signetics
TDK Corporation
TOKO Inc
Vertiv Inc
Wall Industries Inc
YAGEO Corporation
Not Found

Small Signal Bipolar Transistor, 0.005A I(C), 18V V(BR)CEO, 2-Element, NPN, Silicon, HERMETICALLY SEALED, TO-78, 6 PIN

Part Details for LS301 by Linear Integrated Systems

Results Overview of LS301 by Linear Integrated Systems

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LS301 Information

LS301 by Linear Integrated Systems is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for LS301

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LS301 Part Data Attributes

LS301 Linear Integrated Systems
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LS301 Linear Integrated Systems Small Signal Bipolar Transistor, 0.005A I(C), 18V V(BR)CEO, 2-Element, NPN, Silicon, HERMETICALLY SEALED, TO-78, 6 PIN
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Part Life Cycle Code Active
Ihs Manufacturer LINEAR INTEGRATED SYSTEMS INC
Part Package Code TO-78
Package Description CYLINDRICAL, O-MBCY-W6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Collector Current-Max (IC) 0.005 A
Collector-Emitter Voltage-Max 18 V
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 2000
JESD-30 Code O-MBCY-W6
Number of Elements 2
Number of Terminals 6
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz