Part Details for LP7512P70 by Filtronic plc
Results Overview of LP7512P70 by Filtronic plc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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LP7512P70 Information
LP7512P70 by Filtronic plc is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for LP7512P70
LP7512P70 CAD Models
LP7512P70 Part Data Attributes
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LP7512P70
Filtronic plc
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Datasheet
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LP7512P70
Filtronic plc
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FILTRONIC SOLID STATE INC | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 4 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | O-CRDB-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 11 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for LP7512P70
This table gives cross-reference parts and alternative options found for LP7512P70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LP7512P70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NE71300-L | NEC Electronics Group | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-6 | LP7512P70 vs NE71300-L |
| FHX04X | FUJITSU Limited | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | LP7512P70 vs FHX04X |
| NE321000-A | NEC Electronics Group | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | LP7512P70 vs NE321000-A |
| NE38018 | California Eastern Laboratories (CEL) | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET | LP7512P70 vs NE38018 |
| NE38018-T1-A | Renesas Electronics Corporation | Check for Price | NE38018-T1-A | LP7512P70 vs NE38018-T1-A |
| NE76100P | California Eastern Laboratories (CEL) | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | LP7512P70 vs NE76100P |
| FHX35X | FUJITSU Semiconductor Limited | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | LP7512P70 vs FHX35X |
| NE32500 | NEC Compound Semiconductor Devices Ltd | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | LP7512P70 vs NE32500 |
| FHX06X | FUJITSU Semiconductor Limited | Check for Price | RF Small Signal Field-Effect Transistor | LP7512P70 vs FHX06X |
| NE33200 | California Eastern Laboratories (CEL) | Check for Price | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 | LP7512P70 vs NE33200 |