Part Details for LM5030 by National Semiconductor Corporation

PMP7179 参考设计采用 TPS51518 单相 DCAP/DCAP2 控制器生成 0.95V 至 1.05V 的输出电压和 9A 的最大输出电流。一个 2 位 VID 输入可选择四种不同的输出电压。

MIFARE DESFire EV1 is an ISO14443A RFID transponder and an NFC Type 4A Tag Platform that is used in many NFC and RFID security applications due to the ability it has to operate in the clear or operate as a secure transponder using AES Encryption. This design uses the TI AES library along with a M

This is a non-isolated forward push-pull converter design accepting 20V-to-50V input voltage and regulating the output to 36Vout @ 6A.

A dual-phase synchronous buck converter accepting an input voltage of 33Vin to 60Vin and providing an output of 12Vout capable of supplying 30A

This reference design provides isolated positive and negative voltage rails required for Insulated Gate Bipolar Transistor (IGBT) gate drivers from a single 24-volt DC input supply. IGBTs are used in three phase inverters for variable-frequency drives to control the speed of AC motors. This reference design uses a push-pull isolated control topology and provides isolation compliant to IEC61800-5 and is intended to operate from a pre-regulated 24Vdc input.With a regulated (within 5%) input source: a simple open-loop: free-running oscillator can be implemented with a push-pull PWM controller. This topology is essentially a forward converter with two primary windings used to create a dual-drive winding. This fully utilizes the transformer core's magnetizing current more efficiently than flyback or the forward topologies. Another advantage this configuration has over flyback and forward configurations is that the supply output can be scaled up for higher power drives.This reference design also takes advantage of another benefit of the push pull topology in that multiple transformers can be controlled in parallel from a single controller to generate all the isolated voltage rails required for 3-phase IGBT inverters.Lastly: larger IGBTs for higher power drives sometimes require more gate drive current than what is provided by a typical IGBT gate driver: for which designers often use additional transistors for gate current boosting. This reference design provides +16V on the positive outputs and -8V on the negative outputs to compensate for the added voltage drop in those transistors.