Part Details for LDN9926ET1G by LRC Leshan Radio Co Ltd
Overview of LDN9926ET1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for LDN9926ET1G
LDN9926ET1G CAD Models
LDN9926ET1G Part Data Attributes
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LDN9926ET1G
LRC Leshan Radio Co Ltd
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Datasheet
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LDN9926ET1G
LRC Leshan Radio Co Ltd
Power Field-Effect Transistor, 6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | LESHAN RADIO CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for LDN9926ET1G
This table gives cross-reference parts and alternative options found for LDN9926ET1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LDN9926ET1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AF9926NSLA | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Integrated Circuit Technology Corp | LDN9926ET1G vs AF9926NSLA |
FDS9926AS62Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | LDN9926ET1G vs FDS9926AS62Z |
APM9926KC-TRG | Power Field-Effect Transistor, 6A I(D), 20V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 | American Power Devices Inc | LDN9926ET1G vs APM9926KC-TRG |
FDS8926A | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | LDN9926ET1G vs FDS8926A |
SI9926DYD84Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | LDN9926ET1G vs SI9926DYD84Z |
AF9926NSA | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Integrated Circuit Technology Corp | LDN9926ET1G vs AF9926NSA |
SI9926DYL86Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | LDN9926ET1G vs SI9926DYL86Z |
FDS9926AL86Z | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | LDN9926ET1G vs FDS9926AL86Z |
AF9926NSL | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Integrated Circuit Technology Corp | LDN9926ET1G vs AF9926NSL |
IRF7530TRPBF-EL | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | LDN9926ET1G vs IRF7530TRPBF-EL |