Datasheets
LBSS138WT1G by: LRC Leshan Radio Co Ltd

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for LBSS138WT1G by LRC Leshan Radio Co Ltd

Overview of LBSS138WT1G by LRC Leshan Radio Co Ltd

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Price & Stock for LBSS138WT1G

Part # Distributor Description Stock Price Buy
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET 2356
  • 1 $0.1200
  • 112 $0.0750
  • 668 $0.0540
$0.0540 / $0.1200 Buy Now

Part Details for LBSS138WT1G

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LBSS138WT1G Part Data Attributes

LBSS138WT1G LRC Leshan Radio Co Ltd
Buy Now Datasheet
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LBSS138WT1G LRC Leshan Radio Co Ltd Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 0.2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15 W
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for LBSS138WT1G

This table gives cross-reference parts and alternative options found for LBSS138WT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS138WT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
S-LBSS138WT3G Small Signal Field-Effect Transistor, LRC Leshan Radio Co Ltd LBSS138WT1G vs S-LBSS138WT3G
LBSS138WT3G Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, LRC Leshan Radio Co Ltd LBSS138WT1G vs LBSS138WT3G
Part Number Description Manufacturer Compare
ND2410L-1 Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA Vishay Siliconix LBSS138WT1G vs ND2410L-1
2N7007P018 Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc LBSS138WT1G vs 2N7007P018
2N7002 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 TDK Micronas GmbH LBSS138WT1G vs 2N7002
TP0606N6 Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc LBSS138WT1G vs TP0606N6
BSN205 TRANSISTOR 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SC-43, 3 PIN, FET General Purpose Small Signal NXP Semiconductors LBSS138WT1G vs BSN205
2N7008P014 Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc LBSS138WT1G vs 2N7008P014
2N6659 Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Supertex Inc LBSS138WT1G vs 2N6659
ZVN4306ASTOA Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Diodes Incorporated LBSS138WT1G vs ZVN4306ASTOA
BST120-T TRANSISTOR 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors LBSS138WT1G vs BST120-T
2N5639RLRA JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL onsemi LBSS138WT1G vs 2N5639RLRA

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