Part Details for LBSS123LT1G by LRC Leshan Radio Co Ltd
Overview of LBSS123LT1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for LBSS123LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.17A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2119 |
|
$0.0396 / $0.0880 | Buy Now |
|
DISTI #
LBSS123LT1G
|
Avnet Asia | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R (Alt: LBSS123LT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
|
$0.0471 / $0.0526 | Buy Now |
|
|
Chip1Cloud | N-CHANNEL POWER MOSFET | 2500 |
|
RFQ | |
|
|
Sense Electronic Company Limited | SOT23 | 9000 |
|
RFQ | |
|
|
Win Source Electronics | N-CHANNEL POWER MOSFET | 910000 |
|
$0.0100 / $0.0150 | Buy Now |
Part Details for LBSS123LT1G
LBSS123LT1G CAD Models
LBSS123LT1G Part Data Attributes:
|
|
LBSS123LT1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
|
Compare Parts:
LBSS123LT1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for LBSS123LT1G
This table gives cross-reference parts and alternative options found for LBSS123LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS123LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DMP2110U-7 | Small Signal Field-Effect Transistor, | Diodes Incorporated | LBSS123LT1G vs DMP2110U-7 |
| VN2110K1 | Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | Supertex Inc | LBSS123LT1G vs VN2110K1 |
| VN2110N3P012 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | LBSS123LT1G vs VN2110N3P012 |
| ZVP4424CSTZ | Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | LBSS123LT1G vs ZVP4424CSTZ |
| BS170FTA | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | LBSS123LT1G vs BS170FTA |
| BS107PSTOB | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Zetex / Diodes Inc | LBSS123LT1G vs BS107PSTOB |
| 2N7002LT7G | SOT23, N-Channel MOSFET - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O, 3500-REEL | onsemi | LBSS123LT1G vs 2N7002LT7G |
| 2N6659 | Si, SMALL SIGNAL, FET, TO-39 | TT Electronics Power and Hybrid / Semelab Limited | LBSS123LT1G vs 2N6659 |
| VN0606M | Small Signal Field-Effect Transistor, 0.39A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN | Temic Semiconductors | LBSS123LT1G vs VN0606M |
| VP3203N3-GP013 | SMALL SIGNAL, FET | Microchip Technology Inc | LBSS123LT1G vs VP3203N3-GP013 |