L8050QLT1G
LRC Leshan Radio Co Ltd
Description: Small Signal Bipolar Transistor, 0.8A I(C), NPN,

Overview of L8050QLT1G by LRC Leshan Radio Co Ltd

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy Automotive

Price & Stock for L8050QLT1G by LRC Leshan Radio Co Ltd

Part # Manufacturer Description Stock Price Buy
DISTI # L8050QLT1G
Avnet Asia Trans GP BJT NPN 25V 0.8A 3-Pin SOT-23 T/R (Alt: L8050QLT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days 15000
RFQ
Win Source Electronics General Purpose Transistors NPN Silicon 489000
  • 7,145 $0.0070
  • 16,670 $0.0060
  • 25,000 $0.0060
  • 33,335 $0.0060
  • 50,000 $0.0050
  • 60,000 $0.0050
$0.0050 / $0.0070 Buy Now

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Part Data Attributes for L8050QLT1G by LRC Leshan Radio Co Ltd

L8050QLT1G
LRC Leshan Radio Co Ltd
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
LESHAN RADIO CO LTD
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
0.8 A
Configuration
SINGLE
DC Current Gain-Min (hFE)
150
Number of Elements
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
0.3 W
Surface Mount
YES
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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  1. L8050QLT1G
    LRC Leshan Radio Co Ltd
    Small Signal Bipolar Transistor, 0.8A I(C), NPN,
    VS

Alternate Parts for L8050QLT1G

This table gives cross-reference parts and alternative options found for L8050QLT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of L8050QLT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
L8050PLT1G Small Signal Bipolar Transistor, 0.8A I(C), NPN, LRC Leshan Radio Co Ltd L8050QLT1G vs L8050PLT1G
KSC3265YS62Z Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265YS62Z
KSC3265YMTF NPN Epitaxial Silicon Transistor, 3000-REEL onsemi L8050QLT1G vs KSC3265YMTF
KSC3265Y Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265Y
L8050PLT3G Small Signal Bipolar Transistor, 0.8A I(C), NPN, LRC Leshan Radio Co Ltd L8050QLT1G vs L8050PLT3G
KSC3265Y Small Signal Bipolar Transistor onsemi L8050QLT1G vs KSC3265Y
KSC3265YMTF_NL Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265YMTF_NL
KSC3265-Y Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Samsung Semiconductor L8050QLT1G vs KSC3265-Y
KSC3265D87Z Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265D87Z
L8050RLT1 Small Signal Bipolar Transistor, 0.8A I(C), NPN LRC Leshan Radio Co Ltd L8050QLT1G vs L8050RLT1
Part Number Description Manufacturer Compare
2SC3440 Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, NPN, Silicon, SC-59, 3 PIN Mitsubishi Electric L8050QLT1G vs 2SC3440
2SC3742-T1BP13 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN NEC Electronics America Inc L8050QLT1G vs 2SC3742-T1BP13
KSC3265OMTF NPN Epitaxial Silicon Transistor, 3LD, SOT23, JEDEC TO-236, LOW PROFILE, 3000/TAPE REEL Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265OMTF
KSC3265YMTF NPN Epitaxial Silicon Transistor, 3000-REEL onsemi L8050QLT1G vs KSC3265YMTF
KSC3265OD87Z Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265OD87Z
KSC3265O Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265O
KSC3265D87Z Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Fairchild Semiconductor Corporation L8050QLT1G vs KSC3265D87Z
2SC3742-T2BP14 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN NEC Electronics America Inc L8050QLT1G vs 2SC3742-T2BP14
KSC3265-O Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Samsung Semiconductor L8050QLT1G vs KSC3265-O
2SC3265TE85L TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Toshiba America Electronic Components L8050QLT1G vs 2SC3265TE85L

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