Part Details for KSH31-I by Samsung Semiconductor
Overview of KSH31-I by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for KSH31-I
KSH31-I CAD Models
KSH31-I Part Data Attributes
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KSH31-I
Samsung Semiconductor
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Datasheet
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KSH31-I
Samsung Semiconductor
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 15 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz |
Alternate Parts for KSH31-I
This table gives cross-reference parts and alternative options found for KSH31-I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH31-I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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KSH30CI | 1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | KSH31-I vs KSH30CI |
KSH30I | 1 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | KSH31-I vs KSH30I |
KSH31CI | 3A, 100V, NPN, Si, POWER TRANSISTOR | Samsung Semiconductor | KSH31-I vs KSH31CI |
KSH30C-I | Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Fairchild Semiconductor Corporation | KSH31-I vs KSH30C-I |
KSH31C-I | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Samsung Semiconductor | KSH31-I vs KSH31C-I |
KSH32CI | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, IPAK-3 | Fairchild Semiconductor Corporation | KSH31-I vs KSH32CI |
KSH31-I | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Fairchild Semiconductor Corporation | KSH31-I vs KSH31-I |