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Transistors / Power Bipolar Transistors / KSD2012GTU
Datasheets
KSD2012GTU by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Not Found

NPN Epitaxial Silicon Transistor, TO-220-3 FullPak, 1000-TUBE

Part Details for KSD2012GTU by onsemi

Results Overview of KSD2012GTU by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Environmental Monitoring Healthcare Medical Imaging

KSD2012GTU Information

KSD2012GTU by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for KSD2012GTU

Part # Distributor Description Stock Price Buy
DISTI # 46AC0935
Newark Transistor, Npn, 60V, 3A, To-220F-3, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:6... 0V, Transition Frequency Ft:3Mhz, Power Dissipation Pd:25W, Dc Collector Current:3A, Dc Current Gain Hfe:150Hfe, Transistor Case Rohs Compliant: Yes |Onsemi KSD2012GTU more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 12399
  • 1 $0.7900
  • 10 $0.7870
  • 100 $0.7860
  • 500 $0.6720
  • 1,000 $0.6320
  • 3,000 $0.6030
  • 10,000 $0.5960
$0.5960 / $0.7900 Buy Now
DISTI # KSD2012GTU-ND
DigiKey TRANS NPN 60V 3A TO-220F-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube 682
In Stock
  • 1 $1.5400
  • 50 $0.7264
  • 100 $0.6472
  • 500 $0.5080
  • 1,000 $0.4632
  • 2,000 $0.4256
  • 5,000 $0.3848
  • 10,000 $0.3648
$0.3648 / $1.5400 Buy Now
DISTI # KSD2012GTU
Avnet Americas Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube (Alt: KSD2012GTU) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube 1271
RFQ
DISTI # KSD2012GTU
Avnet Americas Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube (Alt: KSD2012GTU) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.3939
  • 4,000 $0.3852
  • 6,000 $0.3764
  • 10,000 $0.3677
  • 20,000 $0.3589
$0.3589 / $0.3939 Buy Now
DISTI # 512-KSD2012GTU
Mouser Electronics Bipolar Transistors - BJT NPN Si Transistor Epitaxial RoHS: Compliant 1384
  • 1 $0.5900
  • 10 $0.5870
  • 100 $0.5630
  • 500 $0.4520
  • 1,000 $0.3990
  • 2,500 $0.3830
  • 5,000 $0.3780
  • 10,000 $0.3640
$0.3640 / $0.5900 Buy Now
DISTI # V99:2348_06302006
Arrow Electronics Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2316 Americas - 1055
  • 1 $0.3703
$0.3703 Buy Now
DISTI # V79:2366_29198919
Arrow Electronics Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Date Code: 2327 Americas - 78
  • 1 $0.4688
  • 50 $0.4641
  • 100 $0.4595
  • 500 $0.3908
  • 712 $0.3879
  • 1,000 $0.3734
  • 2,000 $0.3517
  • 5,000 $0.3495
$0.3495 / $0.4688 Buy Now
Future Electronics KSD2012 Series 60 V 3 A Flange Mount Low Frequency Power Amplifier - TO-220F RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube 0
Tube
  • 1,000 $0.3600
  • 2,000 $0.3550
  • 3,000 $0.3500
  • 5,000 $0.3450
$0.3450 / $0.3600 Buy Now
Future Electronics KSD2012 Series 60 V 3 A Flange Mount Low Frequency Power Amplifier - TO-220F RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube 0
Tube
  • 1,000 $0.3600
  • 2,000 $0.3550
  • 3,000 $0.3500
  • 5,000 $0.3450
$0.3450 / $0.3600 Buy Now
Onlinecomponents.com Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3 RoHS: Compliant 2000 In Stock
  • 50 $0.7020
  • 500 $0.4480
  • 1,000 $0.3912
  • 2,500 $0.3737
  • 5,000 $0.3688
  • 7,500 $0.3670
  • 10,000 $0.3551
  • 15,000 $0.3533
$0.3533 / $0.7020 Buy Now
DISTI # 87651197
Verical Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1000 Package Multiple: 1000 Americas - 7000
  • 1,000 $0.4169
$0.4169 Buy Now
DISTI # 83669576
Verical Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 100 Package Multiple: 50 Date Code: 2429 Americas - 2000
  • 100 $0.9204
  • 500 $0.5630
  • 1,000 $0.4779
  • 2,500 $0.4667
  • 5,000 $0.4414
$0.4414 / $0.9204 Buy Now
DISTI # 68403368
Verical Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 16 Package Multiple: 1 Date Code: 2316 Americas - 1055
  • 16 $0.3703
$0.3703 Buy Now
DISTI # 81054642
Verical Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 17 Package Multiple: 1 Date Code: 2327 Americas - 78
  • 17 $0.4688
  • 50 $0.4641
  • 100 $0.4595
  • 500 $0.3908
  • 712 $0.3879
  • 1,000 $0.3734
  • 2,000 $0.3517
  • 5,000 $0.3495
$0.3495 / $0.4688 Buy Now
DISTI # KSD2012GTU
TME Transistor: NPN, bipolar, 60V, 3A, 2.5W, TO220FP Min Qty: 1 0
  • 1 $0.7580
  • 10 $0.6890
  • 50 $0.6100
  • 200 $0.5460
  • 1,000 $0.5090
$0.5090 / $0.7580 RFQ
DISTI # KSD2012GTU
Avnet Silica Trans GP BJT NPN 60V 3A 3Pin3Tab TO220F TR (Alt: KSD2012GTU) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # KSD2012GTU
EBV Elektronik Trans GP BJT NPN 60V 3A 3Pin3Tab TO220F TR (Alt: KSD2012GTU) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 24790
RFQ
LCSC 60V 25W 1000.5A5V 3A NPN TO-220F-3 Bipolar (BJT) ROHS 22
  • 1 $0.7587
  • 10 $0.6371
  • 30 $0.5613
  • 100 $0.4832
  • 500 $0.4484
  • 1,000 $0.4334
$0.4334 / $0.7587 Buy Now
Master Electronics Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3 RoHS: Compliant 2000 In Stock
  • 50 $0.7020
  • 500 $0.4480
  • 1,000 $0.3912
  • 2,500 $0.3737
  • 5,000 $0.3688
  • 7,500 $0.3670
  • 10,000 $0.3551
  • 15,000 $0.3533
$0.3533 / $0.7020 Buy Now

Part Details for KSD2012GTU

KSD2012GTU CAD Models

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KSD2012GTU Part Data Attributes

Parametric Data
KSD2012GTU onsemi
Buy Now Datasheet
Compare Parts:
KSD2012GTU onsemi NPN Epitaxial Silicon Transistor, TO-220-3 FullPak, 1000-TUBE
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3 FullPak
Package Description LEAD FREE, TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer onsemi
Case Connection ISOLATED
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 150
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz

Alternate Parts for KSD2012GTU

This table gives cross-reference parts and alternative options found for KSD2012GTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSD2012GTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
KSD880GJ69Z Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN KSD2012GTU vs KSD880GJ69Z
KSD880G Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN KSD2012GTU vs KSD880G
2SD880-GR-BP Micro Commercial Components Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN KSD2012GTU vs 2SD880-GR-BP
KSD880YJ69Z Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN KSD2012GTU vs KSD880YJ69Z
KSD880G onsemi Check for Price Power Bipolar Transistor KSD2012GTU vs KSD880G
2SD880GR Galaxy Semi-Conductor Co Ltd Check for Price Power Bipolar Transistor, KSD2012GTU vs 2SD880GR
Part Number Manufacturer Composite Price Description Compare
TIP31AU2 Motorola Mobility LLC Check for Price 3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB KSD2012GTU vs TIP31AU2
TIP31A Bourns Inc Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN KSD2012GTU vs TIP31A
TIP31AL Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin KSD2012GTU vs TIP31AL
TIP31AS Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin KSD2012GTU vs TIP31AS
TIP31A International Devices Inc Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN KSD2012GTU vs TIP31A
TIP31AF NXP Semiconductors Check for Price 3A, 60V, NPN, Si, POWER TRANSISTOR, SOT-186, 3 PIN KSD2012GTU vs TIP31AF
TIP31AN Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin KSD2012GTU vs TIP31AN
TIP31A Crimson Semiconductor Inc Check for Price Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN KSD2012GTU vs TIP31A
TIP31A16A Motorola Mobility LLC Check for Price 3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB KSD2012GTU vs TIP31A16A
TIP31A16 Motorola Mobility LLC Check for Price 3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB KSD2012GTU vs TIP31A16

KSD2012GTU Related Parts

KSD2012GTU Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to dissipate heat efficiently.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.

  • Handle the device by the body, avoiding touching the leads or die. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and follow ESD precautions during handling and assembly.

  • Use a gate drive circuit with a low impedance output stage and a high current capability. Ensure the gate drive voltage is within the recommended range (VGS = ±20V) and the gate resistance is minimized to reduce switching losses.

  • Ensure each device has an individual gate drive circuit and a separate current sense resistor. Implement a master-slave configuration with a single gate drive signal and a current sharing bus to ensure balanced current distribution.