-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
NPN Epitaxial Silicon Transistor, TO-220-3 FullPak, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
46AC0935
|
Newark | Transistor, Npn, 60V, 3A, To-220F-3, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:60V, Transition Frequency Ft:3Mhz, Power Dissipation Pd:25W, Dc Collector Current:3A, Dc Current Gain Hfe:150Hfe, Transistor Case Rohs Compliant: Yes |Onsemi KSD2012GTU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 12400 |
|
$0.3340 / $0.9430 | Buy Now |
DISTI #
KSD2012GTU-ND
|
DigiKey | TRANS NPN 60V 3A TO220F-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
830 In Stock |
|
$0.3648 / $1.2200 | Buy Now |
DISTI #
KSD2012GTU
|
Avnet Americas | Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube (Alt: KSD2012GTU) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube | 14000 Factory Stock |
|
$0.3706 / $0.3968 | Buy Now |
DISTI #
512-KSD2012GTU
|
Mouser Electronics | Bipolar Transistors - BJT NPN Si Transistor Epitaxial RoHS: Compliant | 2063 |
|
$0.3640 / $0.9100 | Buy Now |
DISTI #
V99:2348_06302006
|
Arrow Electronics | Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2316 | Americas - 1055 |
|
$0.3703 / $0.4042 | Buy Now |
DISTI #
V79:2366_29198919
|
Arrow Electronics | Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Date Code: 2327 | Americas - 70 |
|
$0.3495 / $0.5960 | Buy Now |
DISTI #
V36:1790_06302006
|
Arrow Electronics | Trans GP BJT NPN 60V 3A 25000mW 3-Pin(3+Tab) TO-220FP Tube Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Date Code: 2327 | Americas - 8 |
|
$0.3497 / $0.4731 | Buy Now |
|
Future Electronics | KSD2012 Series 60 V 3 A Flange Mount Low Frequency Power Amplifier - TO-220F RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube | 0Tube |
|
$0.3550 / $0.3850 | Buy Now |
|
Future Electronics | KSD2012 Series 60 V 3 A Flange Mount Low Frequency Power Amplifier - TO-220F RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 15 Weeks Container: Tube | 0Tube |
|
$0.3550 / $0.3850 | Buy Now |
|
Onlinecomponents.com | Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3 RoHS: Compliant |
2000 In Stock |
|
$0.3444 / $0.4211 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
KSD2012GTU
onsemi
Buy Now
Datasheet
|
Compare Parts:
KSD2012GTU
onsemi
NPN Epitaxial Silicon Transistor, TO-220-3 FullPak, 1000-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220-3 FullPak | |
Package Description | LEAD FREE, TO-220F, 3 PIN | |
Manufacturer Package Code | 221AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 150 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 25 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz |
This table gives cross-reference parts and alternative options found for KSD2012GTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSD2012GTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SD880-GR | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN | Micro Commercial Components | KSD2012GTU vs 2SD880-GR |
2SD2012 | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220F, 3 PIN | Micro Commercial Components | KSD2012GTU vs 2SD2012 |
2SD880-GR-BP | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Micro Commercial Components | KSD2012GTU vs 2SD880-GR-BP |
KSD880G | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Fairchild Semiconductor Corporation | KSD2012GTU vs KSD880G |
2SD880GR | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Galaxy Microelectronics | KSD2012GTU vs 2SD880GR |
KSD880YJ69Z | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Fairchild Semiconductor Corporation | KSD2012GTU vs KSD880YJ69Z |
KSD880 | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Fairchild Semiconductor Corporation | KSD2012GTU vs KSD880 |
KSD880 | Power Bipolar Transistor | onsemi | KSD2012GTU vs KSD880 |
KSD880GJ69Z | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Fairchild Semiconductor Corporation | KSD2012GTU vs KSD880GJ69Z |
KSD880G | Power Bipolar Transistor | onsemi | KSD2012GTU vs KSD880G |