Part Details for KBP308G by Sangdest Microelectronics (Nanjing) Co Ltd
Overview of KBP308G by Sangdest Microelectronics (Nanjing) Co Ltd
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Part Details for KBP308G
KBP308G CAD Models
KBP308G Part Data Attributes:
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KBP308G
Sangdest Microelectronics (Nanjing) Co Ltd
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KBP308G
Sangdest Microelectronics (Nanjing) Co Ltd
Bridge Rectifier Diode,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SANGDEST MICROELECTRONICS (NANJING) CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Date Of Intro | 2018-06-13 | |
Breakdown Voltage-Min | 800 V | |
Configuration | BRIDGE, 4 ELEMENTS | |
Diode Element Material | SILICON | |
Diode Type | BRIDGE RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.1 V | |
JESD-30 Code | R-PSIP-T4 | |
Non-rep Pk Forward Current-Max | 80 A | |
Number of Elements | 4 | |
Number of Phases | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 30 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Rep Pk Reverse Voltage-Max | 800 V | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |