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Overview of K9F4G08U0E-SIB0 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| R1LV0408DSB-5SI#B0 | Renesas Electronics Corporation | Low Power SRAM, TSOP(2), /Tray | |
| R1LV1616HBG-4SI#B0 | Renesas Electronics Corporation | Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit) | |
| R1LP0108ESA-5SI#B0 | Renesas Electronics Corporation | 1Mb Advanced LPSRAM (128k word x 8bit), sTSOP(32), /Tray |
CAD Models for K9F4G08U0E-SIB0 by Samsung Semiconductor
Part Data Attributes for K9F4G08U0E-SIB0 by Samsung Semiconductor
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|---|---|
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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SAMSUNG SEMICONDUCTOR INC
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Package Description
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TSOP1-48
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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HTS Code
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8542.32.00.51
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JESD-30 Code
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R-PDSO-G48
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Length
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18.4 mm
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Memory Density
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4294967296 bit
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Memory IC Type
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FLASH
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Memory Width
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8
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Number of Functions
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1
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Number of Terminals
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48
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Number of Words
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536870912 words
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Number of Words Code
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512000000
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Operating Mode
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ASYNCHRONOUS
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Operating Temperature-Max
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85 °C
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Operating Temperature-Min
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-40 °C
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Organization
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512MX8
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Package Body Material
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PLASTIC/EPOXY
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Package Code
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TSOP1
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE, THIN PROFILE
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Parallel/Serial
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PARALLEL
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Programming Voltage
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2.7 V
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Seated Height-Max
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1.2 mm
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Supply Voltage-Max (Vsup)
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3.6 V
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Supply Voltage-Min (Vsup)
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2.7 V
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Supply Voltage-Nom (Vsup)
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3.3 V
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Surface Mount
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YES
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Technology
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CMOS
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Temperature Grade
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INDUSTRIAL
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Terminal Form
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GULL WING
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Terminal Pitch
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0.5 mm
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Terminal Position
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DUAL
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Type
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SLC NAND TYPE
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Width
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12 mm
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