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Memory / SRAMs / K6T4008C1B-GB55
Datasheets
K6T4008C1B-GB55 by: Samsung Semiconductor

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

Part Details for K6T4008C1B-GB55 by Samsung Semiconductor

Results Overview of K6T4008C1B-GB55 by Samsung Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

K6T4008C1B-GB55 Information

K6T4008C1B-GB55 by Samsung Semiconductor is an SRAM.
SRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for K6T4008C1B-GB55

Part # Distributor Description Stock Price Buy
Bristol Electronics   8
RFQ
Quest Components IC,SRAM,512KX8,CMOS,SOP,32PIN,PLASTIC 863
  • 1 $28.0000
  • 224 $21.7000
  • 462 $21.0000
$21.0000 / $28.0000 Buy Now

Part Details for K6T4008C1B-GB55

K6T4008C1B-GB55 CAD Models

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K6T4008C1B-GB55 Part Data Attributes

Parametric Data
K6T4008C1B-GB55 Samsung Semiconductor
Buy Now Datasheet
Compare Parts:
K6T4008C1B-GB55 Samsung Semiconductor Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SOIC
Package Description 0.525 INCH, PLASTIC, SOP-32
Pin Count 32
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 55 ns
I/O Type COMMON
JESD-30 Code R-PDSO-G32
JESD-609 Code e0
Length 20.47 mm
Memory Density 4194304 bit
Memory IC Type STANDARD SRAM
Memory Width 8
Number of Functions 1
Number of Terminals 32
Number of Words 524288 words
Number of Words Code 512000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 512KX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code SOP32,.56
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 3 mm
Standby Voltage-Min 2 V
Supply Current-Max 0.08 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Width 11.43 mm

Alternate Parts for K6T4008C1B-GB55

This table gives cross-reference parts and alternative options found for K6T4008C1B-GB55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K6T4008C1B-GB55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K6T4008C1C-GL55 Samsung Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs K6T4008C1C-GL55
R1LP0408CSP-5SI Renesas Electronics Corporation Check for Price 512KX8 STANDARD SRAM, 55ns, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs R1LP0408CSP-5SI
CY62148ELL-55ZSXE Cypress Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, LEAD FREE, TSOP2-32 K6T4008C1B-GB55 vs CY62148ELL-55ZSXE
K6T4008C1C-GB55 Samsung Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs K6T4008C1C-GB55
P4C1048L-55SC Pyramid Semiconductor Corporation Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.445 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs P4C1048L-55SC
Part Number Manufacturer Composite Price Description Compare
M5M5408FP-55LLT Mitsubishi Electric Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs M5M5408FP-55LLT
K6T4008C1B-GL55 Samsung Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs K6T4008C1B-GL55
M5M5408FP-55T Mitsubishi Electric Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs M5M5408FP-55T
M5M5408FP-55LT Mitsubishi Electric Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs M5M5408FP-55LT
KM684000CLG-5 Samsung Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, SOP-32 K6T4008C1B-GB55 vs KM684000CLG-5
UPD434000GW-55L Renesas Electronics Corporation Check for Price 512KX8 STANDARD SRAM, 55ns, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs UPD434000GW-55L
KM684000BLG-5 Samsung Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs KM684000BLG-5
M5M5408FP-55LL Mitsubishi Electric Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 K6T4008C1B-GB55 vs M5M5408FP-55LL
M5M5408BFP-55L Mitsubishi Electric Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, SOP-32 K6T4008C1B-GB55 vs M5M5408BFP-55L
KM684000LG-5 Samsung Semiconductor Check for Price Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.525 INCH, SOP-32 K6T4008C1B-GB55 vs KM684000LG-5

K6T4008C1B-GB55 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the K6T4008C1B-GB55 is 0°C to 85°C.

  • The K6T4008C1B-GB55 requires a refresh cycle every 64ms (tREF) to maintain data integrity. You can use a refresh counter to keep track of the refresh cycles.

  • The minimum clock cycle time for the K6T4008C1B-GB55 is 5ns (tCK).

  • The K6T4008C1B-GB55 is designed to operate at a voltage supply of 1.8V (VDD) and 1.2V (VDDQ). Using a different voltage supply may affect the performance and reliability of the device.

  • The power-up sequence for the K6T4008C1B-GB55 involves applying VDD and VDDQ, followed by a 200us delay, and then applying the clock signal. The power-down sequence involves removing the clock signal, followed by a 200us delay, and then removing VDD and VDDQ.