Part Details for K6R1016V1D-TI10 by Samsung Semiconductor
Overview of K6R1016V1D-TI10 by Samsung Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
HN58C256ATI10E | Renesas Electronics Corporation | EEPROM, TSOP(1), /Tray | |
HN58V66ATI10E | Renesas Electronics Corporation | EEPROM | |
HN58V65ATI10E | Renesas Electronics Corporation | EEPROM |
Price & Stock for K6R1016V1D-TI10
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 134 |
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RFQ | ||
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Quest Components | STANDARD SRAM, 64KX16, 10NS, CMOS, PDSO44 | 1107 |
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$8.2760 / $12.4139 | Buy Now |
Part Details for K6R1016V1D-TI10
K6R1016V1D-TI10 CAD Models
K6R1016V1D-TI10 Part Data Attributes
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K6R1016V1D-TI10
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
K6R1016V1D-TI10
Samsung Semiconductor
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | 0.400 INCH, TSOP2-44 | |
Pin Count | 44 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.B | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 10 ns | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-G44 | |
JESD-609 Code | e0 | |
Length | 18.41 mm | |
Memory Density | 1048576 bit | |
Memory IC Type | STANDARD SRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 44 | |
Number of Words | 65536 words | |
Number of Words Code | 64000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 64KX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP44,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 240 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Standby Current-Max | 0.005 A | |
Standby Voltage-Min | 3 V | |
Supply Current-Max | 0.075 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K6R1016V1D-TI10
This table gives cross-reference parts and alternative options found for K6R1016V1D-TI10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K6R1016V1D-TI10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CY7C1021V33L-10ZC | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, TSOP2-44 | Cypress Semiconductor | K6R1016V1D-TI10 vs CY7C1021V33L-10ZC |
PDM31532SA10TTR | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, PLASTIC, TSOP2-44 | IXYS Corporation | K6R1016V1D-TI10 vs PDM31532SA10TTR |
K6R1016V1D-UI100 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44 | Samsung Semiconductor | K6R1016V1D-TI10 vs K6R1016V1D-UI100 |
K6R1016V1D-TI100 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | Samsung Semiconductor | K6R1016V1D-TI10 vs K6R1016V1D-TI100 |
GS71116AGP-10T | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, TSOP2-44 | GSI Technology | K6R1016V1D-TI10 vs GS71116AGP-10T |
CY7C1021CV33-10ZC | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, TSOP2-44 | Cypress Semiconductor | K6R1016V1D-TI10 vs CY7C1021CV33-10ZC |
71V016SA10PH8 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | Integrated Device Technology Inc | K6R1016V1D-TI10 vs 71V016SA10PH8 |
K6R1016V1D-UC100 | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44 | Samsung Semiconductor | K6R1016V1D-TI10 vs K6R1016V1D-UC100 |
IS61LV6416-10TI | 64KX16 STANDARD SRAM, 10ns, PDSO44, PLASTIC, TSOP2-44 | Integrated Silicon Solution Inc | K6R1016V1D-TI10 vs IS61LV6416-10TI |
GS71116ATP-10IT | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | GSI Technology | K6R1016V1D-TI10 vs GS71116ATP-10IT |