Part Details for K4T1G164QQ-HLE6T by Samsung Semiconductor
Overview of K4T1G164QQ-HLE6T by Samsung Semiconductor
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for K4T1G164QQ-HLE6T
K4T1G164QQ-HLE6T CAD Models
K4T1G164QQ-HLE6T Part Data Attributes
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K4T1G164QQ-HLE6T
Samsung Semiconductor
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Datasheet
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K4T1G164QQ-HLE6T
Samsung Semiconductor
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | FBGA, BGA84,9X15,32 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Time-Max | 0.45 ns | |
Clock Frequency-Max (fCLK) | 333 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Number of Terminals | 84 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | FBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.008 A | |
Supply Current-Max | 0.245 mA | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM |