Part Details for K4T1G164QE-HCF8 by Samsung Semiconductor
Overview of K4T1G164QE-HCF8 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4T1G164QE-HCF8
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip 1 Exchange | INSTOCK | 127 |
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RFQ |
Part Details for K4T1G164QE-HCF8
K4T1G164QE-HCF8 CAD Models
K4T1G164QE-HCF8 Part Data Attributes
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K4T1G164QE-HCF8
Samsung Semiconductor
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Datasheet
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K4T1G164QE-HCF8
Samsung Semiconductor
DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.35 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 533 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
JESD-609 Code | e1 | |
Length | 12.5 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 84 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.015 A | |
Supply Current-Max | 0.215 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 7.5 mm |
Alternate Parts for K4T1G164QE-HCF8
This table gives cross-reference parts and alternative options found for K4T1G164QE-HCF8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G164QE-HCF8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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K4T1G164QE-HCF80 | Samsung Semiconductor | Check for Price | DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | K4T1G164QE-HCF8 vs K4T1G164QE-HCF80 |