Part Details for K4S643233F-DE75 by Samsung Semiconductor
Overview of K4S643233F-DE75 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S643233F-DE75
K4S643233F-DE75 CAD Models
K4S643233F-DE75 Part Data Attributes
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K4S643233F-DE75
Samsung Semiconductor
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Datasheet
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K4S643233F-DE75
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90, FBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 2MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.4 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.135 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 11 mm |
Alternate Parts for K4S643233F-DE75
This table gives cross-reference parts and alternative options found for K4S643233F-DE75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643233F-DE75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IS42VS32200E-10BLI | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 2MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90 | K4S643233F-DE75 vs IS42VS32200E-10BLI |
| K4S64323LF-DU1L | Samsung Semiconductor | Check for Price | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 | K4S643233F-DE75 vs K4S64323LF-DU1L |
| K4S64323LF-DN1H | Samsung Semiconductor | Check for Price | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90 | K4S643233F-DE75 vs K4S64323LF-DN1H |
| M12L64322A-5BG | Elite Semiconductor Memory Technology Inc | Check for Price | Synchronous DRAM, 2MX32, 4.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, BGA-90 | K4S643233F-DE75 vs M12L64322A-5BG |
| MT48V2M32LFFC-8 | Micron Technology Inc | Check for Price | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, PLASTIC, FBGA-90 | K4S643233F-DE75 vs MT48V2M32LFFC-8 |
| K4S643233H-HL750 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | K4S643233F-DE75 vs K4S643233H-HL750 |
| MT48LC2M32LFFC-8IT | Micron Technology Inc | Check for Price | Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, PLASTIC, FBGA-90 | K4S643233F-DE75 vs MT48LC2M32LFFC-8IT |
| K4S643233H-HC750 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | K4S643233F-DE75 vs K4S643233H-HC750 |
| IS45S32200C1-7BLA1 | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90 | K4S643233F-DE75 vs IS45S32200C1-7BLA1 |
| IS45S32200E-7BLA2 | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | K4S643233F-DE75 vs IS45S32200E-7BLA2 |