Datasheets
K4S561632E-UC75 by: Samsung Semiconductor

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54

Part Details for K4S561632E-UC75 by Samsung Semiconductor

Overview of K4S561632E-UC75 by Samsung Semiconductor

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Applications Industrial Automation Renewable Energy Robotics and Drones

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Bristol Electronics   8
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Part Details for K4S561632E-UC75

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K4S561632E-UC75 Part Data Attributes

K4S561632E-UC75 Samsung Semiconductor
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K4S561632E-UC75 Samsung Semiconductor Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.18 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S561632E-UC75

This table gives cross-reference parts and alternative options found for K4S561632E-UC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S561632E-UC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V561620HT-K Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S561632E-UC75 vs HY57V561620HT-K
K4S561632C-TC7C Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632C-TC7C
K4S561632E-TC75 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632E-TC75
HY57V561620HT-H Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S561632E-UC75 vs HY57V561620HT-H
HY57V561620T-HP Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S561632E-UC75 vs HY57V561620T-HP
K4S561632E-TC750 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632E-TC750
K4S561632C-TC75 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632C-TC75
K4S561632D-TC75 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632D-TC75
K4S561632J-UC75T Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632J-UC75T
W9825G6EH-75 DDR DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp K4S561632E-UC75 vs W9825G6EH-75
Part Number Description Manufacturer Compare
K4S561632H-TC750 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S561632E-UC75 vs K4S561632H-TC750
V54C3256164VAT7PC Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation K4S561632E-UC75 vs V54C3256164VAT7PC
M2V56S40TP-6 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Mitsubishi Electric K4S561632E-UC75 vs M2V56S40TP-6
HY57V561620FT-6 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S561632E-UC75 vs HY57V561620FT-6
IS45S16160G-7TLA1 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 Integrated Silicon Solution Inc K4S561632E-UC75 vs IS45S16160G-7TLA1
IS45S16160J-6TLA1 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 Integrated Silicon Solution Inc K4S561632E-UC75 vs IS45S16160J-6TLA1
MT48LC16M16A2B4-6AAAT Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc K4S561632E-UC75 vs MT48LC16M16A2B4-6AAAT
HY57V561620FLT-HI Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S561632E-UC75 vs HY57V561620FLT-HI
M12L2561616A-6BG Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, LEAD FREE, BGA-54 Elite Semiconductor Memory Technology Inc K4S561632E-UC75 vs M12L2561616A-6BG
HY57V561620FT-H Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S561632E-UC75 vs HY57V561620FT-H

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