There are no models available for this part yet.
Overview of K4S561632E-TL75 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for K4S561632E-TL75 by Samsung Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 32 |
|
RFQ | ||||
| Quest Components | SDRAM, 16M x 16, 54 Pin, Plastic, TSOP | 25 |
|
$8.0000 / $12.0000 | Buy Now | ||
| Quest Components | SDRAM, 16M x 16, 54 Pin, Plastic, TSOP | 3 |
|
$6.0000 / $12.0000 | Buy Now |
CAD Models for K4S561632E-TL75 by Samsung Semiconductor
Part Data Attributes for K4S561632E-TL75 by Samsung Semiconductor
|
|
|
|---|---|
|
Pbfree Code
|
No
|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
|
Pin Count
|
54
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.24
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
5.4 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
133 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
1,2,4,8
|
|
JESD-30 Code
|
R-PDSO-G54
|
|
JESD-609 Code
|
e0
|
|
Length
|
22.22 mm
|
|
Memory Density
|
268435456 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
54
|
|
Number of Words
|
16777216 words
|
|
Number of Words Code
|
16000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
16MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP54,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
1,2,4,8,FP
|
|
Standby Current-Max
|
0.002 A
|
|
Supply Current-Max
|
0.18 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Width
|
10.16 mm
|
Alternate Parts for K4S561632E-TL75
This table gives cross-reference parts and alternative options found for K4S561632E-TL75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S561632E-TL75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M12L2561616A-6TG2S | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Elite Semiconductor Memory Technology Inc | K4S561632E-TL75 vs M12L2561616A-6TG2S |
| IS42SM16160D-6TL | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | Integrated Silicon Solution Inc | K4S561632E-TL75 vs IS42SM16160D-6TL |
| V54C3256164VHUI7 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | K4S561632E-TL75 vs V54C3256164VHUI7 |
| K4S561632B-TC75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S561632E-TL75 vs K4S561632B-TC75 |
| TC59SM816BFTL-70 | IC 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | K4S561632E-TL75 vs TC59SM816BFTL-70 |
| MT48LC16M16A1TG-7 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | K4S561632E-TL75 vs MT48LC16M16A1TG-7 |
| IS42S16160C-6TL | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Integrated Silicon Solution Inc | K4S561632E-TL75 vs IS42S16160C-6TL |
| AS4C16M16S-6TCN | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | Alliance Memory Inc | K4S561632E-TL75 vs AS4C16M16S-6TCN |
| K4S561632H-UP750 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP-54 | Samsung Semiconductor | K4S561632E-TL75 vs K4S561632H-UP750 |
| K4S561632E-TL750 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S561632E-TL75 vs K4S561632E-TL750 |