Datasheets
K4S161622E-TC55 by: Samsung Semiconductor

Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

Part Details for K4S161622E-TC55 by Samsung Semiconductor

Overview of K4S161622E-TC55 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

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Part Details for K4S161622E-TC55

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K4S161622E-TC55 Part Data Attributes

K4S161622E-TC55 Samsung Semiconductor
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K4S161622E-TC55 Samsung Semiconductor Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP50,.46,32
Pin Count 50
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 183 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Length 20.95 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 2048
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.155 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S161622E-TC55

This table gives cross-reference parts and alternative options found for K4S161622E-TC55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622E-TC55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S161622H-UC55 Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 Samsung Semiconductor K4S161622E-TC55 vs K4S161622H-UC55
K4S161622D-TC55 Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622E-TC55 vs K4S161622D-TC55
Part Number Description Manufacturer Compare
VG3617161ET-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation K4S161622E-TC55 vs VG3617161ET-8
M52D16161A-10TIG Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Elite Semiconductor Memory Technology Inc K4S161622E-TC55 vs M52D16161A-10TIG
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc K4S161622E-TC55 vs IS42S16100B-6T
MSM56V16160DH-15TS-K Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 OKI Electric Industry Co Ltd K4S161622E-TC55 vs MSM56V16160DH-15TS-K
IC42S16100E-7TL Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc K4S161622E-TC55 vs IC42S16100E-7TL
HY57V161610ETP-55I Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 SK Hynix Inc K4S161622E-TC55 vs HY57V161610ETP-55I
UPD4218160LG5-A70-7JF Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group K4S161622E-TC55 vs UPD4218160LG5-A70-7JF
TC59S1616AFT-12 IC 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components K4S161622E-TC55 vs TC59S1616AFT-12
IS42S16100E-5TL Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 Integrated Silicon Solution Inc K4S161622E-TC55 vs IS42S16100E-5TL
UPD4516161G5-A12 Synchronous DRAM, 1MX16, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc K4S161622E-TC55 vs UPD4516161G5-A12

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