K4M56323PG-FE90T
Samsung Semiconductor
Description: Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90

Overview of K4M56323PG-FE90T by Samsung Semiconductor

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Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

CAD Models for K4M56323PG-FE90T by Samsung Semiconductor
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Part Data Attributes for K4M56323PG-FE90T by Samsung Semiconductor

K4M56323PG-FE90T
Samsung Semiconductor
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA, BGA90,9X15,32
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Time-Max
7 ns
Clock Frequency-Max (fCLK)
111 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Moisture Sensitivity Level
1
Number of Terminals
90
Number of Words
8388608 words
Number of Words Code
8000000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-25 °C
Organization
8MX32
Package Body Material
PLASTIC/EPOXY
Package Code
FBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.0003 A
Supply Current-Max
0.14 mA
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
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  1. K4M56323PG-FE90T
    Samsung Semiconductor
    Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90
    VS

Alternate Parts for K4M56323PG-FE90T

This table gives cross-reference parts and alternative options found for K4M56323PG-FE90T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4M56323PG-FE90T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4M56323PG-FE900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-FE900
K4M56323PG-FE90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-FE90
K4M56323PG-FG90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-FG90
K4M56323PG-HG90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-HG90
K4M56323PG-HG900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-HG900
K4M56323PG-FG900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-FG900
K4M56323PG-HE900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-HE900
K4M56323PG-HG90T Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323PG-HG90T
Part Number Description Manufacturer Compare
K4M56323LE-ML1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323LE-ML1H0
HY5MS7B2LFP-H DDR DRAM, 8MX32, 6.5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc K4M56323PG-FE90T vs HY5MS7B2LFP-H
HY5V52CLF-S Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc K4M56323PG-FE90T vs HY5V52CLF-S
MT46H8M32LGB5-75:H DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4M56323PG-FE90T vs MT46H8M32LGB5-75:H
IS42LS32400AL-7BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc K4M56323PG-FE90T vs IS42LS32400AL-7BL
MT46H8M32LFB5-6L:A DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc K4M56323PG-FE90T vs MT46H8M32LFB5-6L:A
K4S28323LE-SE1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4S28323LE-SE1H0
K4M56323LD-EP80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4M56323LD-EP80
K4S283233E-HG1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4S283233E-HG1H0
K4S563233F-FG1L0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4M56323PG-FE90T vs K4S563233F-FG1L0

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