Part Details for K4E640812E-JI45T by Samsung Semiconductor
Overview of K4E640812E-JI45T by Samsung Semiconductor
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Consumer Electronics
Computing and Data Storage
Part Details for K4E640812E-JI45T
K4E640812E-JI45T CAD Models
K4E640812E-JI45T Part Data Attributes
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K4E640812E-JI45T
Samsung Semiconductor
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K4E640812E-JI45T
Samsung Semiconductor
EDO DRAM, 8MX8, 45ns, CMOS, PDSO32,
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | SOJ, SOJ32,.44 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Time-Max | 45 ns | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-J32 | |
Memory Density | 67108864 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 8 | |
Number of Terminals | 32 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 8MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOJ | |
Package Equivalence Code | SOJ32,.44 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Self Refresh | NO | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.12 mA | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | J BEND | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL |