Part Details for K4D551638F-LC50 by Samsung Semiconductor
Overview of K4D551638F-LC50 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
CLC502A/BPA | Rochester Electronics LLC | CLC502 - OP AMP, CLAMPING, LOW-GAIN, FAST-SETTLING - Dual marked (5962-9174301MPA) | |
CLC505AJ/B | Rochester Electronics LLC | CLC505 - Operational Amplifier, 1 Func, 8000uV Offset-Max, PDSO8 | |
CLC502AJE | Rochester Electronics | Operational Amplifier, 1 Func, 1600uV Offset-Max, PDSO8, PLASTIC, SOIC-8 |
Price & Stock for K4D551638F-LC50
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 36 |
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RFQ |
Part Details for K4D551638F-LC50
K4D551638F-LC50 CAD Models
K4D551638F-LC50 Part Data Attributes
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K4D551638F-LC50
Samsung Semiconductor
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Datasheet
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K4D551638F-LC50
Samsung Semiconductor
DDR DRAM, 16MX16, CMOS, PDSO66,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | TSSOP, TSSOP66,.46 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G66 | |
Memory Density | 268435456 bit | |
Memory IC Type | GDDR1 DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Terminals | 66 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Temperature-Max | 65 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Equivalence Code | TSSOP66,.46 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Sequential Burst Length | 2,4,8 | |
Supply Current-Max | 0.38 mA | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.635 mm | |
Terminal Position | DUAL |
Alternate Parts for K4D551638F-LC50
This table gives cross-reference parts and alternative options found for K4D551638F-LC50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D551638F-LC50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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K4D551638F-LC500 | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | K4D551638F-LC50 vs K4D551638F-LC500 |
K4D551638F-LC50T | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, CMOS, PDSO66, | K4D551638F-LC50 vs K4D551638F-LC50T |