Part Details for K4D263238E-GC2A by Samsung Semiconductor
Overview of K4D263238E-GC2A by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Price & Stock for K4D263238E-GC2A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1100 |
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RFQ |
Part Details for K4D263238E-GC2A
K4D263238E-GC2A CAD Models
K4D263238E-GC2A Part Data Attributes
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K4D263238E-GC2A
Samsung Semiconductor
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Datasheet
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K4D263238E-GC2A
Samsung Semiconductor
DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | FBGA-144 | |
Pin Count | 144 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.55 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 350 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | S-PBGA-B144 | |
JESD-609 Code | e0 | |
Length | 12 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | GDDR1 DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 65 °C | |
Operating Temperature-Min | ||
Organization | 4MX32 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LFBGA | |
Package Equivalence Code | BGA144,12X12,32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.4 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8,FP | |
Standby Current-Max | 0.095 A | |
Supply Current-Max | 0.935 mA | |
Supply Voltage-Max (Vsup) | 2.625 V | |
Supply Voltage-Min (Vsup) | 2.375 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 12 mm |
Alternate Parts for K4D263238E-GC2A
This table gives cross-reference parts and alternative options found for K4D263238E-GC2A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D263238E-GC2A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4D263238K-VC400 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC2A vs K4D263238K-VC400 |
K4D263238K-GC40T | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC2A vs K4D263238K-GC40T |
HY5DW283222BF-25 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 | SK Hynix Inc | K4D263238E-GC2A vs HY5DW283222BF-25 |
HY6V22F-45 | DDR DRAM, 4MX32, 0.9ns, CMOS, PBGA144, 12 X 12 MM, FBGA-144 | SK Hynix Inc | K4D263238E-GC2A vs HY6V22F-45 |
K4N26323AE-GC20 | DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, FBGA-144 | Samsung Semiconductor | K4D263238E-GC2A vs K4N26323AE-GC20 |
HY5DU283222BFP-28 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144 | SK Hynix Inc | K4D263238E-GC2A vs HY5DU283222BFP-28 |
NT5DS4M32EF-28 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC2A vs NT5DS4M32EF-28 |
NT5DU4M32EF-4 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC2A vs NT5DU4M32EF-4 |
K4D263238G-VC360 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, LEAD FREE, FBGA-144 | Samsung Semiconductor | K4D263238E-GC2A vs K4D263238G-VC360 |
NT5DS4M32EF-33 | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 | Nanya Technology Corporation | K4D263238E-GC2A vs NT5DS4M32EF-33 |