Part Details for K4B2G0846C by Samsung Semiconductor
Overview of K4B2G0846C by Samsung Semiconductor
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Applications
Consumer Electronics
Education and Research
Computing and Data Storage
Part Details for K4B2G0846C
K4B2G0846C CAD Models
K4B2G0846C Part Data Attributes
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K4B2G0846C
Samsung Semiconductor
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Datasheet
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K4B2G0846C
Samsung Semiconductor
DDR DRAM,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Access Mode | MULTI BANK PAGE BURST | |
| JESD-30 Code | R-PBGA-B78 | |
| Length | 11 mm | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Seated Height-Max | 1.2 mm | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 7.5 mm |