Part Details for K4B1G0446C-ZCF8T by Samsung Semiconductor
Overview of K4B1G0446C-ZCF8T by Samsung Semiconductor
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for K4B1G0446C-ZCF8T
K4B1G0446C-ZCF8T CAD Models
K4B1G0446C-ZCF8T Part Data Attributes
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K4B1G0446C-ZCF8T
Samsung Semiconductor
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Datasheet
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K4B1G0446C-ZCF8T
Samsung Semiconductor
DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA94
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Time-Max | 0.3 ns | |
Clock Frequency-Max (fCLK) | 533 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 8 | |
JESD-30 Code | R-PBGA-B94 | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR3 DRAM | |
Memory Width | 4 | |
Number of Terminals | 94 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Organization | 256MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | FBGA | |
Package Equivalence Code | BGA94,11X19,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Sequential Burst Length | 8 | |
Supply Voltage-Nom (Vsup) | 1.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM |