Part Details for JANTXV2N7334 by International Rectifier
Overview of JANTXV2N7334 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTXV2N7334
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 2 |
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$264.2700 | Buy Now |
Part Details for JANTXV2N7334
JANTXV2N7334 CAD Models
JANTXV2N7334 Part Data Attributes:
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JANTXV2N7334
International Rectifier
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Datasheet
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Compare Parts:
JANTXV2N7334
International Rectifier
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | HERMETIC SEALED PACKAGE-14 | |
Pin Count | 36 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-036AB | |
JESD-30 Code | R-CDIP-T14 | |
JESD-609 Code | e0 | |
Number of Elements | 4 | |
Number of Terminals | 14 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.4 W | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 80 ns | |
Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for JANTXV2N7334
This table gives cross-reference parts and alternative options found for JANTXV2N7334. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N7334, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFG110 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | International Rectifier | JANTXV2N7334 vs IRFG110 |
2N7334 | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | International Rectifier | JANTXV2N7334 vs 2N7334 |