JANTXV2N6800 by:
Vishay Siliconix
Defense Logistics Agency
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
Microsemi Corporation
Omnirel Corp
Semicoa Semiconductors
Unitrode Corporation
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,

Part Details for JANTXV2N6800 by Vishay Siliconix

Results Overview of JANTXV2N6800 by Vishay Siliconix

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Applications Consumer Electronics Audio and Video Systems

JANTXV2N6800 Information

JANTXV2N6800 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for JANTXV2N6800

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JANTXV2N6800 Part Data Attributes

JANTXV2N6800 Vishay Siliconix
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JANTXV2N6800 Vishay Siliconix Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,
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Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Reach Compliance Code unknown
Configuration SINGLE
Drain Current-Max (ID) 3 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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