JANTXV2N6768
Description: Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN

Overview of JANTXV2N6768 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for JANTXV2N6768 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 0
  • 100 $57.6000
$57.6000 Buy Now

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Part Data Attributes for JANTXV2N6768 by Infineon Technologies AG

JANTXV2N6768
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TO-204, 2 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
11.3 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Qualified
Reference Standard
MIL-19500/543
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. JANTXV2N6768
    Infineon Technologies AG
    Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
    VS

Alternate Parts for JANTXV2N6768

This table gives cross-reference parts and alternative options found for JANTXV2N6768. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6768, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF352 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,13A I(D),TO-3 Intersil Corporation JANTXV2N6768 vs IRF352
2N6768 14A, 400V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6768 vs 2N6768
IRF350 14A, 400V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6768 vs IRF350
IRF350 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors JANTXV2N6768 vs IRF350
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier JANTXV2N6768 vs JANTXV2N6768
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6768 vs JANTX2N6768
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6768 vs JANTX2N6768
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG JANTXV2N6768 vs JANTX2N6768
IRF352 Power Field-Effect Transistor, 13A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6768 vs IRF352
JANTXV2N6768 14A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANTXV2N6768 vs JANTXV2N6768
Part Number Description Manufacturer Compare
IRF351 15A, 350V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANTXV2N6768 vs IRF351
IRF351 Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-204AA, 2 PIN Fairchild Semiconductor Corporation JANTXV2N6768 vs IRF351
JANHCA2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANTXV2N6768 vs JANHCA2N6768
2N6768E3 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation JANTXV2N6768 vs 2N6768E3
UFN351 Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6768 vs UFN351
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp JANTXV2N6768 vs JANTX2N6768
IRF353 13A, 350V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, METAL PACKAGE-2 Motorola Mobility LLC JANTXV2N6768 vs IRF353
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6768 vs 2N6768
UFN350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6768 vs UFN350
UFN353 Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6768 vs UFN353

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