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Transistors Power Field-Effect Transistors JANTXV2N6762

JANTXV2N6762
Description: Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Overview of JANTXV2N6762 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Audio and Video Systems

Price & Stock for JANTXV2N6762 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 0
  • 100 $42.0000
$42.0000 Buy Now

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Part Data Attributes for JANTXV2N6762 by Infineon Technologies AG
Parametric Data

JANTXV2N6762
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TO-3, 2 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1.1 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Qualified
Reference Standard
MIL-19500/542
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. JANTXV2N6762
    Infineon Technologies AG
    Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
    VS

Alternate Parts for JANTXV2N6762

This table gives cross-reference parts and alternative options found for JANTXV2N6762. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6762, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTXV2N6762 vs 2N6762
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JANTXV2N6762 vs 2N6762
JANTX2N6762 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANTXV2N6762 vs JANTX2N6762
JANTXV2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JANTXV2N6762 vs JANTXV2N6762
JANTX2N6762 Power Field-Effect Transistor, 5.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6762 vs JANTX2N6762
JANTX2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6762 vs JANTX2N6762
JANTX2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JANTXV2N6762 vs JANTX2N6762
JAN2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN International Rectifier JANTXV2N6762 vs JAN2N6762
IRF430R1 Power Field-Effect Transistor, 4.5A I(D), 20V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTXV2N6762 vs IRF430R1
JANTX2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JANTXV2N6762 vs JANTX2N6762
Part Number Description Manufacturer Compare
IRF430R1 4.5A, 20V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6762 vs IRF430R1
JAN2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN International Rectifier JANTXV2N6762 vs JAN2N6762
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JANTXV2N6762 vs 2N6762
IRF430 4.5A, 20V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6762 vs IRF430
JANTX2N6762 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANTXV2N6762 vs JANTX2N6762
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTXV2N6762 vs 2N6762
2N6762 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6762 vs 2N6762
IRF430 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix JANTXV2N6762 vs IRF430
IRF430R1 Power Field-Effect Transistor, 4.5A I(D), 20V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTXV2N6762 vs IRF430R1
JANTXV2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6762 vs JANTXV2N6762

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