There are no models available for this part yet.
Overview of JANTXV2N5793 by VPT Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Price & Stock for JANTXV2N5793 by VPT Components
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
JANTXV2N5793
|
Avnet Americas | Trans GP BJT NPN 40V 600mA 6-Pin TO-78 Bag - Bulk (Alt: JANTXV2N5793) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$123.2322 / $143.4342 | Buy Now | |
|
DISTI #
JANTXV2N5793
|
TTI | Bipolar Transistors - BJT MIL-PRF-19500/495 Min Qty: 5 Package Multiple: 1 Container: Bulk | Americas - 0 |
|
$140.2900 | Buy Now |
CAD Models for JANTXV2N5793 by VPT Components
Part Data Attributes for JANTXV2N5793 by VPT Components
|
|
|
|---|---|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
VPT COMPONENTS
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.21.00.95
|
|
Date Of Intro
|
2019-08-12
|
|
Collector Current-Max (IC)
|
0.6 A
|
|
Collector-Base Capacitance-Max
|
8 pF
|
|
Collector-Emitter Voltage-Max
|
40 V
|
|
Configuration
|
SEPARATE, 2 ELEMENTS
|
|
DC Current Gain-Min (hFE)
|
25
|
|
JEDEC-95 Code
|
TO-78
|
|
JESD-30 Code
|
O-MBCY-W8
|
|
Number of Elements
|
2
|
|
Number of Terminals
|
8
|
|
Operating Temperature-Max
|
175 °C
|
|
Operating Temperature-Min
|
-65 °C
|
|
Package Body Material
|
METAL
|
|
Package Shape
|
ROUND
|
|
Package Style
|
CYLINDRICAL
|
|
Polarity/Channel Type
|
NPN
|
|
Power Dissipation Ambient-Max
|
0.6 W
|
|
Power Dissipation-Max (Abs)
|
0.6 W
|
|
Qualification Status
|
Qualified
|
|
Reference Standard
|
MIL-19500
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
WIRE
|
|
Terminal Position
|
BOTTOM
|
|
Transistor Element Material
|
SILICON
|
|
VCEsat-Max
|
0.9 V
|
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