Part Details for JANTXV2N5416 by New England Semiconductor
Overview of JANTXV2N5416 by New England Semiconductor
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Part Details for JANTXV2N5416
JANTXV2N5416 CAD Models
JANTXV2N5416 Part Data Attributes
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JANTXV2N5416
New England Semiconductor
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Datasheet
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JANTXV2N5416
New England Semiconductor
Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 15 pF | |
| Collector-Emitter Voltage-Max | 300 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JEDEC-95 Code | TO-5 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1.5 W | |
| Power Dissipation-Max (Abs) | 10 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 15 MHz | |
| VCEsat-Max | 2 V |