Part Details for JANTXV2N3635UB by VPT Components
Overview of JANTXV2N3635UB by VPT Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTXV2N3635UB
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
JANTXV2N3635UB
|
Avnet Americas | JANTXV2N3635UB - Bulk (Alt: JANTXV2N3635UB) Min Qty: 39 Package Multiple: 1 Container: Bulk | 0 |
|
$33.6000 / $37.2750 | Buy Now |
DISTI #
JANTXV2N3635UB
|
TTI | Bipolar Transistors - BJT MIL-PRF-19500/357 Min Qty: 20 Package Multiple: 1 Container: Bulk | Americas - 0 |
|
$36.4600 | Buy Now |
Part Details for JANTXV2N3635UB
JANTXV2N3635UB CAD Models
JANTXV2N3635UB Part Data Attributes
|
JANTXV2N3635UB
VPT Components
Buy Now
Datasheet
|
Compare Parts:
JANTXV2N3635UB
VPT Components
Small Signal Bipolar Transistor,
|
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VPT COMPONENTS | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Collector Current-Max (IC) | 1 A | |
Collector-Base Capacitance-Max | 10 pF | |
Collector-Emitter Voltage-Max | 140 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 60 | |
JESD-30 Code | R-XDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 650 ns | |
Turn-on Time-Max (ton) | 200 ns | |
VCEsat-Max | 0.6 V |