Part Details for JANTXV1N5632A by New England Semiconductor
Overview of JANTXV1N5632A by New England Semiconductor
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Part Details for JANTXV1N5632A
JANTXV1N5632A CAD Models
JANTXV1N5632A Part Data Attributes
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JANTXV1N5632A
New England Semiconductor
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Datasheet
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JANTXV1N5632A
New England Semiconductor
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-13,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| Breakdown Voltage-Max | 9.55 V | |
| Breakdown Voltage-Min | 8.65 V | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| JEDEC-95 Code | DO-13 | |
| JESD-30 Code | O-MALF-W2 | |
| Non-rep Peak Rev Power Dis-Max | 1500 W | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 1 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/500 | |
| Surface Mount | NO | |
| Technology | AVALANCHE | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL |