Part Details for JANTX2N6851 by Harris Semiconductor
Overview of JANTX2N6851 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for JANTX2N6851
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 52 |
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$18.5167 / $21.7844 | Buy Now |
Part Details for JANTX2N6851
JANTX2N6851 CAD Models
JANTX2N6851 Part Data Attributes
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JANTX2N6851
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
JANTX2N6851
Harris Semiconductor
Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 160 ns | |
| Turn-on Time-Max (ton) | 150 ns |
Alternate Parts for JANTX2N6851
This table gives cross-reference parts and alternative options found for JANTX2N6851. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6851, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF9230-JQR-BR1 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6851 vs IRFF9230-JQR-BR1 |
| JANTXV2N6851 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTX2N6851 vs JANTXV2N6851 |
| IRFF9230 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTX2N6851 vs IRFF9230 |
| JANS2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | Microsemi Corporation | JANTX2N6851 vs JANS2N6851 |
| 2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Temic Semiconductors | JANTX2N6851 vs 2N6851 |
| JANTXV2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | Microsemi Corporation | JANTX2N6851 vs JANTXV2N6851 |
| 2N6851R1 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6851 vs 2N6851R1 |
| JANTXV2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | JANTX2N6851 vs JANTXV2N6851 |
| IRFF9230-JQR-B | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTX2N6851 vs IRFF9230-JQR-B |
| JANTX2N6851 | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTX2N6851 vs JANTX2N6851 |