Part Details for JANTX2N6804 by International Rectifier
Overview of JANTX2N6804 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N6804
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-204AA | 64 |
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$42.2280 / $47.7360 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-204AA | 4 |
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$6.3000 / $12.6000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-204AA | 2 |
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$73.4400 | Buy Now |
Part Details for JANTX2N6804
JANTX2N6804 CAD Models
JANTX2N6804 Part Data Attributes:
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JANTX2N6804
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANTX2N6804
International Rectifier
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | TO-3 | |
| Package Description | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 81 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/562 | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6804
This table gives cross-reference parts and alternative options found for JANTX2N6804. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6804, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTXV2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | Microsemi Corporation | JANTX2N6804 vs JANTXV2N6804 |
| 2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTX2N6804 vs 2N6804 |
| JANTXV2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | JANTX2N6804 vs JANTXV2N6804 |
| 2N6804E3 | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN | Microsemi Corporation | JANTX2N6804 vs 2N6804E3 |
| IRF9130 | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | JANTX2N6804 vs IRF9130 |
| IRF9130-QR-BR1 | 11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6804 vs IRF9130-QR-BR1 |
| 2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | JANTX2N6804 vs 2N6804 |
| 2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | Microsemi Corporation | JANTX2N6804 vs 2N6804 |
| IRF9130R1 | 11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6804 vs IRF9130R1 |
| JANHCA2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | International Rectifier | JANTX2N6804 vs JANHCA2N6804 |