JANTX2N6798U by:

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

Part Details for JANTX2N6798U by Defense Logistics Agency

Overview of JANTX2N6798U by Defense Logistics Agency

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Applications Industrial Automation

Part Details for JANTX2N6798U

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JANTX2N6798U Part Data Attributes

JANTX2N6798U Defense Logistics Agency
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JANTX2N6798U Defense Logistics Agency Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Part Life Cycle Code Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY
Package Description HERMETIC SEALED, LCC-18
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 98 mJ
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.46 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
Number of Elements 1
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Qualified
Reference Standard MIL-19500/557
Surface Mount YES
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTX2N6798U

This table gives cross-reference parts and alternative options found for JANTX2N6798U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6798U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANTXV2N6798U Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency JANTX2N6798U vs JANTXV2N6798U
Part Number Description Manufacturer Compare
IRFE230E4 4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited JANTX2N6798U vs IRFE230E4
IRFE230-JQR-B Power Field-Effect Transistor, 4.8A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors JANTX2N6798U vs IRFE230-JQR-B
JANTX2N6798U Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG JANTX2N6798U vs JANTX2N6798U
IRFE230PBF Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier JANTX2N6798U vs IRFE230PBF
2N6798U Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 Microsemi Corporation JANTX2N6798U vs 2N6798U
IRFE230 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG JANTX2N6798U vs IRFE230
IRFE230-JQR-BE4 4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited JANTX2N6798U vs IRFE230-JQR-BE4
JANTXV2N6798U Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 Microsemi Corporation JANTX2N6798U vs JANTXV2N6798U
JANTXV2N6798U Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency JANTX2N6798U vs JANTXV2N6798U
IRFE230-JQR-BE4 Power Field-Effect Transistor, 4.8A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors JANTX2N6798U vs IRFE230-JQR-BE4

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