Datasheets
JANTX2N6794 by:
International Rectifier
Component Research Co
Defense Logistics Agency
Fairchild Semiconductor Corporation
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
Microsemi Corporation
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Part Details for JANTX2N6794 by International Rectifier

Results Overview of JANTX2N6794 by International Rectifier

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JANTX2N6794 Information

JANTX2N6794 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for JANTX2N6794

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 356
  • 1 $12.0000
  • 5 $9.0000
  • 13 $8.1000
  • 22 $7.5000
  • 55 $7.2000
  • 113 $6.9000
$6.9000 / $12.0000 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,1.5A I(D),TO-39 284
  • 1 $16.0000
  • 101 $9.6000
  • 209 $9.2000
$9.2000 / $16.0000 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,1.5A I(D),TO-39 2
  • 1 $20.0000
$20.0000 Buy Now

Part Details for JANTX2N6794

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JANTX2N6794 Part Data Attributes

JANTX2N6794 International Rectifier
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Compare Parts:
JANTX2N6794 International Rectifier Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description HERMETIC SEALED, TO-39, 3 PIN
Reach Compliance Code compliant
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 0.11 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 3.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6.5 A
Qualification Status Qualified
Reference Standard MIL-19500/555
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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