Part Details for JANTX2N6794 by International Rectifier
Results Overview of JANTX2N6794 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANTX2N6794 Information
JANTX2N6794 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N6794
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 356 |
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$6.9000 / $12.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,1.5A I(D),TO-39 | 284 |
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$9.2000 / $16.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,1.5A I(D),TO-39 | 2 |
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$20.0000 | Buy Now |
Part Details for JANTX2N6794
JANTX2N6794 CAD Models
JANTX2N6794 Part Data Attributes
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JANTX2N6794
International Rectifier
Buy Now
Datasheet
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JANTX2N6794
International Rectifier
Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
Reach Compliance Code | compliant | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 0.11 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 1.5 A | |
Drain-source On Resistance-Max | 3.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 6.5 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/555 | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |