Part Details for JANTX2N6782U by Infineon Technologies AG
Overview of JANTX2N6782U by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N6782U
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$72.0000 | Buy Now |
Part Details for JANTX2N6782U
JANTX2N6782U CAD Models
JANTX2N6782U Part Data Attributes
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JANTX2N6782U
Infineon Technologies AG
Buy Now
Datasheet
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JANTX2N6782U
Infineon Technologies AG
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CHIP CARRIER, R-CQCC-N15 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 7 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.69 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CQCC-N15 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 15 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 15 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/556 | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6782U
This table gives cross-reference parts and alternative options found for JANTX2N6782U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6782U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFE110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | JANTX2N6782U vs IRFE110 |
IRFE110-QR-JQR-BE4 | Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6782U vs IRFE110-QR-JQR-BE4 |
IRFE110-QR-JQR-B | 3.5A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6782U vs IRFE110-QR-JQR-B |
JANTX2N6782U | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | JANTX2N6782U vs JANTX2N6782U |
IRFE110-JQR-BE4 | Power Field-Effect Transistor, 3.1A I(D), 100V, 0.69ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6782U vs IRFE110-JQR-BE4 |
IRFE110-QR-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | JANTX2N6782U vs IRFE110-QR-JQR-B |
IRFE110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | JANTX2N6782U vs IRFE110 |
IRFE110-QR-JQR-BE4 | 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6782U vs IRFE110-QR-JQR-BE4 |
IRFE110-JQR-BE4 | 3.1A, 100V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6782U vs IRFE110-JQR-BE4 |
IRFE110-JQR-B | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | TT Electronics Resistors | JANTX2N6782U vs IRFE110-JQR-B |