Part Details for JANTX2N6762 by International Rectifier
Overview of JANTX2N6762 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N6762
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 266 |
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RFQ |
Part Details for JANTX2N6762
JANTX2N6762 CAD Models
JANTX2N6762 Part Data Attributes:
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JANTX2N6762
International Rectifier
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Datasheet
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JANTX2N6762
International Rectifier
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-3 | |
| Package Description | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1.1 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/542 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 110 ns | |
| Turn-on Time-Max (ton) | 70 ns |
Alternate Parts for JANTX2N6762
This table gives cross-reference parts and alternative options found for JANTX2N6762. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6762, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF430 | 4.5A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | JANTX2N6762 vs IRF430 |
| JANTXV2N6762 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | JANTX2N6762 vs JANTXV2N6762 |
| JANHCA2N6762 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | International Rectifier | JANTX2N6762 vs JANHCA2N6762 |
| IRF430PBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | JANTX2N6762 vs IRF430PBF |
| 2N6762 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-3 | Intersil Corporation | JANTX2N6762 vs 2N6762 |