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JANTX2N6383 by:
New England Semiconductor
Cobham PLC
Cobham Semiconductor Solutions
Defense Logistics Agency
Harris Semiconductor
Intersil Corporation
MACOM
Microchip Technology Inc
Microsemi Corporation
New England Semiconductor
Silicon Transistor Corporation
VPT Components
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Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN

Part Details for JANTX2N6383 by New England Semiconductor

Overview of JANTX2N6383 by New England Semiconductor

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Part Details for JANTX2N6383

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JANTX2N6383 Part Data Attributes

JANTX2N6383 New England Semiconductor
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JANTX2N6383 New England Semiconductor Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR
Package Description TO-3, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Reference Standard MIL
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 20 MHz

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