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JANTX2N6299 by:
New England Semiconductor
Cobham PLC
Cobham Semiconductor Solutions
Defense Logistics Agency
MACOM
Microchip Technology Inc
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
New England Semiconductor
Silicon Transistor Corporation
Vishay HiRel Systems
VPT Components
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, TO-213AA, 2 PIN

Part Details for JANTX2N6299 by New England Semiconductor

Results Overview of JANTX2N6299 by New England Semiconductor

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JANTX2N6299 Information

JANTX2N6299 by New England Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for JANTX2N6299

Part # Distributor Description Stock Price Buy
Bristol Electronics   1
RFQ

Part Details for JANTX2N6299

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JANTX2N6299 Part Data Attributes

JANTX2N6299 New England Semiconductor
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JANTX2N6299 New England Semiconductor Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin, TO-213AA, 2 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR
Package Description TO-213AA, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 8 A
Collector-Base Capacitance-Max 300 pF
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-213AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Reference Standard MIL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz
VCEsat-Max 2 V

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