Part Details for JANTX2N5672 by New England Semiconductor
Overview of JANTX2N5672 by New England Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for JANTX2N5672
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER BIPOLAR TRANSISTOR, 120V V(BR)CEO, 1-ELEMENT, NPN, SILICON, METAL, 2 PIN | 5 |
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$545.0611 / $596.1606 | Buy Now |
Part Details for JANTX2N5672
JANTX2N5672 CAD Models
JANTX2N5672 Part Data Attributes
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JANTX2N5672
New England Semiconductor
Buy Now
Datasheet
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JANTX2N5672
New England Semiconductor
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Package Description | TO-204AA, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 120 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 140 W | |
| Power Dissipation-Max (Abs) | 80 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 50 MHz | |
| Turn-off Time-Max (toff) | 2000 ns | |
| Turn-on Time-Max (ton) | 500 ns | |
| VCEsat-Max | 0.75 V |