Part Details for JANSR2N7650U8C by Infineon Technologies AG
Overview of JANSR2N7650U8C by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for JANSR2N7650U8C
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DISTI #
JANSR2N7650U8C
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Avnet Americas | Power MOSFET, N Channel, 60V, 25A, 30 Milliohms, SMD-0.2, 3 Pins, Surface Mount - Bulk (Alt: JANSR2N7650U8C) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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RFQ | |
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Ameya Holding Limited | 13 |
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RFQ |
Part Details for JANSR2N7650U8C
JANSR2N7650U8C CAD Models
JANSR2N7650U8C Part Data Attributes
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JANSR2N7650U8C
Infineon Technologies AG
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Datasheet
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JANSR2N7650U8C
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.6 pF | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Reference Standard | MIL-19500; MIL-STD-750; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 41 ns | |
| Turn-on Time-Max (ton) | 31 ns |