Part Details for JANSR2N7410 by Harris Semiconductor
Overview of JANSR2N7410 by Harris Semiconductor
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Part Details for JANSR2N7410
JANSR2N7410 CAD Models
JANSR2N7410 Part Data Attributes
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JANSR2N7410
Harris Semiconductor
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Datasheet
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JANSR2N7410
Harris Semiconductor
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN, TO-205AF, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | RADIATION HARDENED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.96 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10.5 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500/638 | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |