Datasheets
JANSR2N7261 by:

Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN

Part Details for JANSR2N7261 by International Rectifier

Overview of JANSR2N7261 by International Rectifier

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Price & Stock for JANSR2N7261

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-205AF 25
  • 1 $520.8750
  • 5 $451.4250
  • 10 $416.7000
$416.7000 / $520.8750 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-205AF 7
  • 1 $799.0500
  • 5 $730.5600
  • 7 $684.9000
$684.9000 / $799.0500 Buy Now

Part Details for JANSR2N7261

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JANSR2N7261 Part Data Attributes:

JANSR2N7261 International Rectifier
Buy Now Datasheet
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JANSR2N7261 International Rectifier Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code BCY
Package Description CYLINDRICAL, O-MBCY-W3
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 130 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Reference Standard MIL-19500/601
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 98 ns
Turn-on Time-Max (ton) 105 ns

Alternate Parts for JANSR2N7261

This table gives cross-reference parts and alternative options found for JANSR2N7261. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7261, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANSH2N7261 Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN International Rectifier JANSR2N7261 vs JANSH2N7261
IRHF8130 Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN International Rectifier JANSR2N7261 vs IRHF8130
JANKCAH2N7261 Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 International Rectifier JANSR2N7261 vs JANKCAH2N7261
IRHF7130PBF Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN International Rectifier JANSR2N7261 vs IRHF7130PBF
2N7261 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANSR2N7261 vs 2N7261
Part Number Description Manufacturer Compare
IRHF8130 Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN International Rectifier JANSR2N7261 vs IRHF8130
2N7261 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANSR2N7261 vs 2N7261
JANSH2N7261 Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN International Rectifier JANSR2N7261 vs JANSH2N7261
JANKCAH2N7261 Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 International Rectifier JANSR2N7261 vs JANKCAH2N7261
IRHF7130PBF Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN International Rectifier JANSR2N7261 vs IRHF7130PBF

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