There are no models available for this part yet.
Overview of JANSR2N3421S by VPT Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for JANSR2N3421S by VPT Components
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
JANSR2N3421S
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Avnet Americas | Medium Power Silicon Transistor NPN 80V 5A 3-Pin TO-39 - Bulk (Alt: JANSR2N3421S) Min Qty: 23 Package Multiple: 1 Container: Bulk | 0 |
|
$53.9301 / $62.7711 | Buy Now | |
|
DISTI #
JANSR2N3421S
|
TTI | Bipolar Transistors - BJT NPN POWER TRANSISTOR Min Qty: 25 Package Multiple: 1 Container: Bulk | Americas - 0 |
|
$56.1403 | Buy Now |
CAD Models for JANSR2N3421S by VPT Components
Part Data Attributes for JANSR2N3421S by VPT Components
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|---|---|
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
|
VPT COMPONENTS
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Package Description
|
,
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Reach Compliance Code
|
unknown
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ECCN Code
|
EAR99
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HTS Code
|
8541.29.00.95
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Case Connection
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COLLECTOR
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Collector Current-Max (IC)
|
3 A
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Collector-Base Capacitance-Max
|
150 pF
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Collector-Emitter Voltage-Max
|
80 V
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Configuration
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SINGLE
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DC Current Gain-Min (hFE)
|
15
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Fall Time-Max (tf)
|
200 ns
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JEDEC-95 Code
|
TO-205AD
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JESD-30 Code
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O-MBCY-W3
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Number of Elements
|
1
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Number of Terminals
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3
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Operating Temperature-Max
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200 °C
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Operating Temperature-Min
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-65 °C
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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CYLINDRICAL
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
|
NPN
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Power Dissipation Ambient-Max
|
1 W
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Power Dissipation-Max (Abs)
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5 W
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Qualification Status
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Qualified
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Reference Standard
|
MIL-PRF-19500; RH - 100K Rad(Si)
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Rise Time-Max (tr)
|
220 ns
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Surface Mount
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NO
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Terminal Form
|
WIRE
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Terminal Position
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BOTTOM
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Turn-off Time-Max (toff)
|
1300 ns
|
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Turn-on Time-Max (ton)
|
300 ns
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VCEsat-Max
|
0.5 V
|