Part Details for JANSG2N7394U by Infineon Technologies AG
Results Overview of JANSG2N7394U by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSG2N7394U Information
JANSG2N7394U by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSG2N7394U
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSG2N7394U
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Avnet Americas | Transistor MOSFET N-Channel 60V 35A 3-Pin CSMD - Bulk (Alt: JANSG2N7394U) Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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RFQ | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 1 | 0 |
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$3,356.0000 | Buy Now |
Part Details for JANSG2N7394U
JANSG2N7394U CAD Models
JANSG2N7394U Part Data Attributes
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JANSG2N7394U
Infineon Technologies AG
Buy Now
Datasheet
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JANSG2N7394U
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A001.A.1.A | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 283 A | |
| Qualification Status | Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANSG2N7394U
This table gives cross-reference parts and alternative options found for JANSG2N7394U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSG2N7394U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRHN8054PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | JANSG2N7394U vs IRHN8054PBF |