Part Details for JANSG2N7268 by International Rectifier
Overview of JANSG2N7268 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANSG2N7268
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 100V, 0.065OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA | 76 |
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$378.0000 / $472.5000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 100V, 0.065OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA | 1 |
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$255.0000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 100V, 0.065OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA | 55 |
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$392.6720 / $458.1173 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 100V, 0.065OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA | 97 |
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$472.5000 / $551.2500 | Buy Now |
Part Details for JANSG2N7268
JANSG2N7268 CAD Models
JANSG2N7268 Part Data Attributes:
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JANSG2N7268
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANSG2N7268
International Rectifier
Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
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Pbfree Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Part Package Code | TO-254AA | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A001.A.1.A | |
Additional Feature | RADIATION HARDENED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 136 A | |
Qualification Status | Qualified | |
Reference Standard | MILITARY STANDARD (USA) | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANSG2N7268
This table gives cross-reference parts and alternative options found for JANSG2N7268. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSG2N7268, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Microsemi Corporation | JANSG2N7268 vs 2N7268 |
IRHM7150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs IRHM7150 |
JANSG2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs JANSG2N7268 |
JANSH2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs JANSH2N7268 |
JANTXVH2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs JANTXVH2N7268 |
JANSR2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs JANSR2N7268 |
2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | JANSG2N7268 vs 2N7268 |
IRHM8150 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs IRHM8150 |
2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | JANSG2N7268 vs 2N7268 |
JANSF2N7268 | Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Infineon Technologies AG | JANSG2N7268 vs JANSF2N7268 |